PART |
Description |
Maker |
2SK1740-5 2SK1740 |
HF amplifiers low frequency amplifiers analog switches Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
SANYO
|
2SD1695 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
2SD1843 2SD1843-T |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN硅外延晶体管(达林顿接线)低频功率放大器和低速开 Low-freq. power amp., low-speed switching power tr.
|
NEC, Corp. NEC[NEC]
|
BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
2SD2163 |
Silicon power transistor NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
|
NEC
|
2SD2162 2SD2162-AZ |
8 A, 100 V, NPN, Si, POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC
|
2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 5A条一(c)| TO - 220AB现有 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC, Corp. NEC Corp.
|
BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers NPN Silicon RF Transistor
|
Infineon Technologies AG
|
AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Gain Block Amplifiers The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
2SD2150 2SC4115S 2SD2264 A5800368 2SD2150R |
Low Frequency Transistor(20V/ 3A) TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SC-62 From old datasheet system Low Frequency Transistor (20V, 3A) Low Frequency Transistor(20V, 3A) Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
BFX73-2N918 2N3600 BFX73 2N918 -BFX73-2N918 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS 高频率的振荡器和放大
|
http:// ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
2SC2690 2SC2690A |
Use in audio and radio Frequency power amplifiers.
|
NEC[NEC]
|